2008. 10. 2 1/7 semiconductor technical data kf8n60p/f n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features v dss =600v, i d =8a drain-source on resistance : r ds(on) (max)=1.05 @v gs =10v qg(typ.)= 24nc maximum rating (tc=25 ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit kf8n60p KF8N60F drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current @t c =25 i d 8 8* a @t c =100 5 5* pulsed (note1) i dp 20 20* single pulsed avalanche energy (note 2) e as 230 mj repetitive avalanche energy (note 1) e ar 14.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 154 50 w derate above 25 1.23 0.4 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 0.81 2.5 /w thermal resistance, junction-to-ambient r thja 62.5 62.5 /w g d s pin connection dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 1. gate 2. drain 3. source to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ kf8n60p KF8N60F
2008. 10. 2 2/7 kf8n60p/f revision no : 1 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ drain cut-off current i dss v ds =600v, v gs =0v - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2 - 4 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =4a - 0.85 1.05 dynamic total gate charge q g v ds =480v, i d =8a v gs =10v (note4,5) - 24 - nc gate-source charge q gs - 5.4 - gate-drain charge q gd - 10 - turn-on delay time t d(on) v dd =300v r l =37.5 r g =25 (note4,5) - 27 - ns turn-on rise time t r - 32 - turn-off delay time t d(off) - 72 - turn-off fall time t f - 30 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 865 - pf output capacitance c oss - 111 - reverse transfer capacitance c rss - 14 - source-drain diode ratings continuous source current i s v gs 2008. 10. 2 3/7 kf8n60p/f revision no : 1 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 1.2 0.8 0.6 0.7 0.9 1.1 1.0 08 412 6 210 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 4a v gs = 0v i ds = 250 100 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =6v v gs =10v v gs =6v v ds =20v v gs =5v 100 c 25 c
2008. 10. 2 4/7 kf8n60p/f revision no : 1 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 28 32 12 4 20 16 24 8 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area 0 6 2 4 10 8 75 150 125 50 100 025 drain current i d (a) (kf8n60p) i d =8a c junction temperature t j ( ) fig11. i d - t j v ds = 480v v ds = 300v v ds = 120v t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 10 100 1000 10000 05 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s 100ms operation in this area is limited by r ds(on) 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 (KF8N60F) t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 100ms operation in this area is limited by r ds(on)
2008. 10. 2 5/7 kf8n60p/f revision no : 1 time (sec) (kf8n60p) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 fig12. transient thermal response curve transient thermal resistance duty=0.5 singl e p ulse 0.05 time (sec) fig13. transient thermal response curve transient thermal resistance 0.02 0.2 0.01 0.1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 0.81 c/w max. (KF8N60F) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 duty=0 .5 single p ul se 0.05 0.02 0.2 0.01 0.1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 2.5 c/w max.
2008. 10. 2 6/7 kf8n60p/f revision no : 1 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2008. 10. 2 7/7 kf8n60p/f revision no : 1 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
|
